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Title:  Principal Device Engineer, RF Wireless

Company:  Renesas Electronics America Inc.
Country/Region:  US
State:  CA
City:  San Diego
Department: 
Business Unit:  Production and Technology Unit
Office: 
Job Function:  Production and Technology
Job Type:  Permanent
Description: 

Renesas Electronics Americas (REA) is a dynamic, multi-cultural tech company where employees can learn, mentor and thrive. REA brings together the strong financial foundation of a multi-billion dollar global operation and the flexibility and velocity of a smaller organization. We are developing technologies for the latest advances in mobile computing, secured connected devices, autonomous driving, smart homes and factories and more. Our solutions are at the heart of products developed by the major innovators around the world. Join us and be part of what’s next in electronics.

 

Highly skilled modeling engineer will be responsible for the advancement of Renesas’s GaAs and CMOS technology modeling capabilities for RF applications. The candidate will work closely with the Technology Team, Product Development Teams, Design Automation Group, and Product Engineering to define SPICE modeling strategies, development of new modeling methodologies and advanced tool introductions. The candidate will be responsible for working closely with Renesas’s RF GaAs and CMOS foundry partners to identify weaknesses in the existing SPICE modeling capabilities, drive improvements and creative solutions to enable our design teams to successfully introduce products that exceed our customer’s performance expectations.

 

Responsibilities:

  • Lead the advancement and execution of SPICE modeling capabilities of new GaAs pHEMT/HBT and CMOS technology for RF applications
  • Support RF product development teams modeling requirements and needs, and drive creative solutions to complex problems
  • Evaluate foundry SPICE models and drive foundries to solve modeling issues and advance simulation accuracy
  • Lead test chip design, test structure characterization, model extraction activities to advance internal and foundry capabilities
  • Lead definition and execution of device/technology modeling requirements and new tool introduction
  • Actively participate in industry modeling forums and conferences through publication or event participation

 

Requirements:

  • MS or PHD in EE or Physics with 12+ years’ of modeling experience of GaAs(or GaN) pHEMT/HBT and CMOS technologies for RF applications
  • High band gap, Bipolar, and MOSFET device physics
  • DC and RF Characterization of active & passive devices and substrate from sub-6GHz to mmWave range
  • Well versed in SPICE model extraction, simulation, and EDA tool implementations
  • Good written and oral communication and project management skills
  • Preferred knowledge: RF circuit design, IC process of GaAs/CMOS, device reliability

 

Equal Opportunity Employer: Disability/Veteran