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Title:  Manager of Power Device Development

Company:  Renesas Electronics Corporation
Country/Region:  JP
State:  Ibaraki
City:  Hitachinaka-City
Department:  Power Device Technology Department
Business Unit:  Production and Technology Unit
Office:  JP, Ibaraki (Naka)
Job Function:  Production and Technology
Job Type:  Permanent
Description: 

Manager of Power Device Development

Renesas Electronics is developing power semiconductor devices for various products including automobiles.
Renesas Electronics is looking for development management staff who are responsible for next-generation and future competitive power device technology using their knowledge and experience.
The work covers a wide range including concept design, prototype development, electrical evaluation, and set-up mass production; that enable you to improve your technical , management skill and career.
Renesas Electronics expects your ability and appreciates your high sense of leadership and teamwork.

 

■Job description

Technical Leader of wafer process development for expanding the business of xEV IGBTs.
- Total project management of IGBT wafer process development from concept study to mass production.
- Direction on device structure design and process flow construction.
- Coordination and negotiation with various departments such as element process technology (frontside/backside process), business, quality assurance, etc.
■Required Skills and Work Experience

MUST

- Experience in project management of power device development
- Experience in Power device structure design and process development

WANT

- Expertise on field stop IGBT wafer process, device operation, reliability, etc.

- Expertise on IGBT module packaging.
- Expertize on inverter system.

Required Language Skills

Japanese:business level

English:business level(TOEIC Score around 700)