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Title:  Technical Leader of IGBT Wafer Process Development

Company:  Renesas Electronics Corporation
Country/Region:  JP
State:  Ibaraki
City:  Hitachinaka-City
Department:  Power Device Technology Department
Business Unit:  Production and Technology Unit
Office:  REL(Naka)
Job Function:  Production and Technology
Job Type:  Permanent
Description: 

Technical Leader of IGBT Wafer Process Development

Renesas Electronics is developing power semiconductor devices for various products including automobiles. Renesas Electronics is looking for development management staff who are responsible for next-generation and future competitive power device technology using their knowledge and experience. The work covers a wide range including concept design, prototype development, electrical evaluation, and set-up mass production; that enable you to improve your technical , management skill and career. Renesas Electronics expects your ability and appreciates your high sense of leadership and teamwork.

 

■Job description

Technical Leader of wafer process development for expanding the business of xEV IGBTs.

  • Total project management of IGBT wafer process development from concept study to mass production.
  • Direction on device structure design and process flow construction.
  • Coordination and negotiation with various departments such as element process technology (frontside/backside process), business, quality assurance, etc.

■Required Skills and Work Experience

MUST

  • Over 2 years experience in project management of power device development
  • Over 5 years experience in IGBT device structure design and process development
  • Expertise on field stop IGBT wafer process, device operation, reliability, etc.

WANT

  • Expertise on IGBT module packaging.
  • Expertize on inverter system.

Required Language Skills

  • Japanese:be able to understand spoken English (TOEIC score around 500)
  • English:business level(TOEIC Score around 700)