Title: Power device technical engineer

Company: Renesas Electronics Corporation

Country/Region: JP

State: 茨城県

City: ひたちなか市

Department: Power Device Technology Department

Business Unit: Production and Technology Unit

Office: REL(Naka)

Job Function: Production and Technology

Job Type: Permanent

Description:

Power device technical engineer

Renesas Electronics is developing power semiconductor devices for various products including automobiles.
Renesas Electronics is looking for development staffs who are responsible for next-generation and future competitive power device technology using their knowledge and experience.
The work covers a wide range including concept design, prototype development, electrical evaluation, and set-up mass production; that enable you to improve your technical skill and career.
Renesas Electronics expects your ability and appreciates your high sense of ownership and teamwork.

■Job description

wafer process development for expanding the business of xEV IGBTs.

IGBT wafer process development from concept study to mass production.
Device structure design and process flow construction.
Coordination with various departments such as element process technology (frontside/backside process), business, quality assurance, etc.

■Required Skills and Work Experience

MUST

Over 2 years experience in project management of power device development
Over 3 years experience in IGBT device structure design and process development
Expertise on field stop IGBT wafer process, device operation, reliability, etc.

WANT

TCAD simulation skill
TEG layout skill
Device electrical characterization skill
Knowledge on IGBT module packaging.
Knowledge on inverter system.

Required Language Skills

Japnese:be able to understand spoken English (TOEIC score around 500)
English:business level（TOEIC Score around 700)