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Title:  Power device technical engineer

Company:  Renesas Electronics Corporation
Country/Region:  JP
State:  茨城県
City:  ひたちなか市
Department:  Power Device Technology Department
Business Unit:  Production and Technology Unit
Office:  REL(Naka)
Job Function:  Production and Technology
Job Type:  Permanent
Description: 

 

Power device technical engineer

Renesas Electronics is developing power semiconductor devices for various products including automobiles.
Renesas Electronics is looking for development staffs who are responsible for next-generation and future competitive power device technology using their knowledge and experience.
The work covers a wide range including concept design, prototype development, electrical evaluation, and set-up mass production; that enable you to improve your technical skill and career.
Renesas Electronics expects your ability and appreciates your high sense of ownership and teamwork.

 

■Job description

wafer process development for expanding the business of xEV IGBTs.

  • IGBT wafer process development from concept study to mass production.
  • Device structure design and process flow construction.
  • Coordination with various departments such as element process technology (frontside/backside process), business, quality assurance, etc.

 

■Required Skills and Work Experience

MUST

  • Over 2 years experience in project management of power device development
  • Over 3 years experience in IGBT device structure design and process development
  • Expertise on field stop IGBT wafer process, device operation, reliability, etc.

WANT

  • TCAD simulation skill
  • TEG layout skill
  • Device electrical characterization skill
  • Knowledge on IGBT module packaging.
  • Knowledge on inverter system.

Required Language Skills

  • Japnese:be able to understand spoken English (TOEIC score around 500)
  • English:business level(TOEIC Score around 700)